サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-07-15
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
関連部品
説明
Infineon IRLR7843TRLPBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 161A;D-Pak (TO-252AA);VF 1V
MOSFET N-CH 30V 161A DPAK / Trans MOSFET N-CH 30V 161A 3-Pin(2+Tab) DPAK T/R
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max3.3 mΩ
Rise Time42 ns
Schedule B8541290080
Turn-Off Delay Time34 ns
Turn-On Delay Time25 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm