Infineon IRL6372TRPBF

Transistor MOSFET Array Dual N-CH 30V 8.1A 8-Pin SOIC T/R

30V Dual N-Channel Low Logic Level HEXFET Power MOSFET in a SO-8 Lead-Free package, SO8, RoHS

Dual N-Channel 30 V 23 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8

Power Field-Effect Transistor, 8.1A I(D), 30V, 0.0179ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

DUAL N CH HEXFET POWER MOSFET, 30V, 8.1A, SOIC-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 8.1 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 17.9 / Gate-Source Voltage V = 12 / Fall Time ns = 15 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 5.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2