代替部品
Price @ 1000
$ 0.499
Stock
105,344
2,084,495
Authorized Distributors
1
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
64 A
64 A
Threshold Voltage
1 V
-
Rds On Max
12 mΩ
12 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
110 W
83 W
Input Capacitance
1.65 nF
1.65 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-30
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
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説明
Infineon IRL3103SPBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 12 Milliohms;ID 64A;D2Pak;PD 94W;VGS +/-16V
Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) D2PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:64A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 30V, 64A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:83W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:64A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Power Dissipation on 1 Sq. PCB:3.7W; Pulse Current Idm:220A; SMD Marking:L3103S; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)64 A
Current Rating64 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time9.1 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.65 nF
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
PackagingBulk
Power Dissipation110 W
Rds On Max12 mΩ
Resistance12 MΩ
Rise Time120 ns
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8.9 ns
Voltage Rating (DC)30 V
Dimensions
Height4.826 mm
Length10.668 mm