サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 9 months ago)
関連部品
InfineonIRL2910STRLPBF
MOSFET N-CH 100V 55A D2PAK "N-Channel 100 V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK"
InfineonIRF3710SPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS +/-20
InfineonIRF3710STRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS +/-20
onsemiHUF75639S3S
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
説明
Infineon IRL2910SPBFの詳細は販売業者から提供されます。
Single N-Channel 100 V 3.8 W 140 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
MOSFET N-CH 100V 55A D2PAK "N-Channel 100 V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK"
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK
MOSFET, 100V, 55A, 26 MOHM, 93.3 NC QG,LOGIC LEVEL, D2-PAK
MOSFET, N CH, 100V, 55A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)55 A
Current Rating55 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vds)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance26 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max26 mΩ
Recovery Time350 ns
Resistance26 mΩ
Rise Time100 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time49 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm