サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2012-11-04
LTD Date2013-05-04
関連部品
説明
Infineon IRG4IBC30FDPBFの詳細は販売業者から提供されます。
Trans IGBT Chip N-CH 600V 20.3A 3-Pin(3+Tab) TO-220 Full-Pak
600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak package
Insulated Gate Bipolar Transistor, 20.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20.3A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:45W; Package/Case:TO-220 ;RoHS Compliant: Yes
IGBT, 600V, 20.3A, TO-220FP; DC Collector Current: 20.3A; Collector Emitter Saturation Voltage Vce(on): 1.59V; Power Dissipation Pd: 45W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins:
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)600 V
Current Rating20.3 A
Element ConfigurationSingle
Max Collector Current20.3 A
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation45 W
Reverse Recovery Time42 ns
Rise Time26 ns
Turn-Off Delay Time310 ns
Turn-On Delay Time42 ns
Voltage Rating (DC)600 V