代替部品
Price @ 1000
$ 2.35
Stock
247,996
37,176
Authorized Distributors
0
2
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251-3
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
-
4 V
Rds On Max
18 mΩ
18 mΩ
Gate to Source Voltage (Vgs)
-
20 V
Power Dissipation
-
140 W
Input Capacitance
2.93 nF
2.93 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-31
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-13
LTD Date2008-09-13
説明
Infineon IRFU3710Zの詳細は販売業者から提供されます。
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Trans MOSFET N-CH 100V 56A 3-Pin(3+Tab) IPAK
Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:56A; On-Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK; Leaded Process Compatible:No RoHS Compliant: No
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Input Capacitance2.93 nF
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Rds On Max18 mΩ
Rise Time43 ns
Voltage Rating (DC)100 V