サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-06
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
関連部品
InfineonIPI086N10N3GXKSA1
MOSFET N-CH 100V 80A TO262-3 N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3
InfineonIRFSL4310ZPBF
MOSFET N-CH 100V 120A TO262 N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole TO-262
InfineonIPI045N10N3GXKSA1
MOSFET N-CH 100V 100A TO262-3 N-Channel 100 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
説明
Infineon IRFSL4410ZPBFの詳細は販売業者から提供されます。
N CH POWER MOSFET, HEXFET, 100V, 97A, TO-262; Transistor Polarity:N Channel; Con
MOSFET N-CH 100V 97A TO262 N-Channel 100 V 97A (Tc) 230W (Tc) Through Hole TO-262
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Infineon NChannel EnhancedMOSTube StrongIRFETseries, Vds=100 V, 97 A, I2PAK (TO-262)encapsulation, Through hole mounting, 3Pin
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)97 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.82 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation230 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max9 mΩ
Rise Time52 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm