サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-18
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
説明
Infineon IRFS5615TRLPBFの詳細は販売業者から提供されます。
Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 150V 42 mOhm 40 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH Si 150V 33A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 150V, 33A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0345ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; P
メーカーの別名
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time13.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance42 mΩ
Package Quantity800
Power Dissipation144 W
Rds On Max42 mΩ
Rise Time23.1 ns
Threshold Voltage5 V
Turn-Off Delay Time17.2 ns
Turn-On Delay Time8.9 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.652 mm