価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFS5615TRLPBF | 0 | 800 | Bulk | 18h | |||||||
| Farnell | IRFS5615TRLPBF | 0 | 1 | Cut Tape | 1d | |||||||
| Win Source | WS-IRFS5615TRLPBF | 2,400 | 45 | 2h | ||||||||
| Worldway Electronics | IRFS5615TRLPBF | 3,549 | 7 | Tape & Reel | 1h | |||||||
| Anlinkda | IRFS5615TRLPBF | 41,983 | 9h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
説明
Infineon IRFS5615TRLPBFの詳細は販売業者から提供されます。
Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 150V 42 mOhm 40 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH Si 150V 33A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 150V, 33A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0345ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; P
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time13.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance42 mΩ
Package Quantity800
Power Dissipation144 W
Rds On Max42 mΩ
Rise Time23.1 ns
Threshold Voltage5 V
Turn-Off Delay Time17.2 ns
Turn-On Delay Time8.9 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.652 mm