代替部品
Price @ 1000
$ 2.23
$ 1.95
Stock
9,922
99,023
Authorized Distributors
1
1
Mount
Surface Mount, Through Hole
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vds)
75 V
75 V
Continuous Drain Current (ID)
87 A
87 A
Threshold Voltage
3.7 V
3.7 V
Rds On Max
7.2 mΩ
7.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
4.43 nF
4.43 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-08-29
Lifecycle StatusObsolete (Last Updated: 9 months ago)
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説明
Infineon IRFR7740PBFの詳細は販売業者から提供されます。
MOSFET N-CH 75V 87A DPAK N-Channel 75 V 87A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
Single N-Channel 75 V 7.2 mOhm 84 nC HEXFET® Power Mosfet - DPAK
75V Single N-Channel HEXFET Power MOSFET in a D-PAK package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 87A I(D), 75V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 75V, 87A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 87A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)87 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance7.2 mΩ
Drain to Source Voltage (Vds)75 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.43 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance7.2 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max7.2 mΩ
Rise Time36 ns
Threshold Voltage3.7 V
Turn-Off Delay Time55 ns
Turn-On Delay Time10 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm