代替部品
Price @ 1000
$ 0.427
Stock
25,221
336,747
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
-
3.7 V
Rds On Max
7.9 mΩ
7.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
99 W
99 W
Input Capacitance
3.02 nF
3.02 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-03-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
InfineonIRFR1018EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 56A;D-Pak;PD 110W;VGS +/-20
Diodes Inc.DMTH6009LK3Q-13
Mosfet, N-Ch, 60V, 59A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH6009LK3Q-13
Diodes Inc.DMT6009LK3-13
Mosfet, N-Ch, 60V, 57A, To-252 Rohs Compliant: Yes |Diodes Inc. DMT6009LK3-13
説明
Infineon IRFR7546PBFの詳細は販売業者から提供されます。
Single N-Channel 60 V 6.6 mOhm 58 nC HEXFET® Power Mosfet - TO-252AA
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 56A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.9 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.02 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation99 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance7.9 mΩ
Package Quantity3000
Power Dissipation99 W
Rds On Max7.9 mΩ
Rise Time28 ns
Turn-Off Delay Time36 ns
Turn-On Delay Time8.1 ns
Dimensions
Height2.52 mm