代替部品
Price @ 1000
$ 0.67
$ 1.153
$ 1.153
Stock
196,173
494,824
494,824
Authorized Distributors
6
5
5
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vds)
100 V
100 V
100 V
Continuous Drain Current (ID)
35 A
35 A
35 A
Threshold Voltage
-
-
-
Rds On Max
28.5 mΩ
28.5 mΩ
28.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
91 W
91 W
91 W
Input Capacitance
1.69 nF
1.69 nF
1.69 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-02-03
Lifecycle StatusProduction (Last Updated: 9 months ago)
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説明
Infineon IRFR540ZTRLPBFの詳細は販売業者から提供されます。
Power MOSFET, N Channel, 100 V, 35 A, 28.5 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
MOSFET N-CH 100V 35A DPAK N-Channel 100 V 35A (Tc) 91W (Tc) Surface Mount TO-252AA (DPAK)
Trans MOSFET N-CH Si 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Lighting LED
MOSFET; Transistor Type:MOSFET; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:35A; Package/Case:DPAK; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance28.5 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.69 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation91 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance28.5 mΩ
Package Quantity3000
Power Dissipation91 W
Rds On Max28.5 mΩ
Rise Time42 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time14 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm