Infineon IRFP1405PBF

Single N-Channel 55 V 5.3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC

55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

MOSFET, N, 55V, 160A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:95A; Junction to Case Thermal Resistance A:0.49°C/W; On State resistance @ Vgs = 10V:5.3ohm; Package / Case:TO-247AC; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:640A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 95 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 5.3 / Gate-Source Voltage V = 20 / Fall Time ns = 150 / Rise Time ns = 160 / Turn-OFF Delay Time ns = 140 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 310