Infineon IRFL024NTRPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V

Single N-Channel 55 V 0.075 Ohm 18.3 nC HEXFET® Power Mosfet - SOT-223

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R

Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:2.8A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.8 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 17.7 / Rise Time ns = 13.4 / Turn-OFF Delay Time ns = 22.2 / Turn-ON Delay Time ns = 8.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1