価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFI4212H-117P | 7 | 17h | |||||||||
| RS (Formerly Allied Electronics) | IRFI4212H-117P | 0 | 2 | Bulk | 6h | |||||||
| Weyland Electronics Group Pte. Ltd. | IRFI4212H-117P | 984 | 1 | Tape & Reel | 2d | |||||||
| Win Source | WS-IRFI4212H-117P | 28,260 | 40 | 18h | ||||||||
| Worldway Electronics | IRFI4212H-117P | 16,989 | 7 | Tube | 1d |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-21
Lifecycle StatusObsolete (Last Updated: 1 month ago)
関連部品
InfineonIRFI4019H-117P
150V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package
STMicroelectronicsSTF12N65M5
N-channel 650 V, 0.39 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in TO-220FP package
説明
Infineon IRFI4212H-117Pの詳細は販売業者から提供されます。
100V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package
MOSFET, Dual N Ch., Digital Audio, 5-PIN TO-220, 100V, 58MOHM, 11A, 6.9 NC
Trans MOSFET N-CH Si 100V 11A 5-Pin(5+Tab) TO-220FP Tube / MOSFET 2N-CH 100V 11A TO-220FP-5
Dual N-Channel 100 V 72.5 mOhm 18 nC HEXFET® Power Mosfet - TO-220-5
MOSFET, NN CH, 100V, TO-220 F-PAK; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:18W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:100V; Module Configuration:Dual; On Resistance Rds(on):58mohm; Power Dissipation Pd:18W
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET; Integrated Half Bridge package; Optimized for Class-D Audio Amplifier Applications; Low Qrr for better THD and improved efficiency; Low Qg and Qsw for Better THD and Improved Efficiency | Target Applications: Class D Audio
メーカーの別名
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-220-5
MountThrough Hole
Number of Pins5
Number of Terminals5
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance72.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time4.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance490 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation18 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels2
Number of Elements2
On-State Resistance72.5 mΩ
Package Quantity1000
Power Dissipation18 W
Rds On Max72.5 mΩ
Recovery Time54 ns
Resistance72.5 MΩ
Rise Time8.3 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time9.5 ns
Turn-On Delay Time4.7 ns
Dimensions
Height9.02 mm
Length10.67 mm
Width4.83 mm