サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-02-28
LTD Date2014-09-30
関連部品
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200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.
InfineonIRFI4212H-117P
100V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package
InfineonIRFI4019H-117P
150V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package
説明
Infineon BTS247Zの詳細は販売業者から提供されます。
Trans MOSFET N-CH 55V 33A Automotive 5-Pin(5+Tab) TO-220 Tube
SPEED TEMPFET Power Field-Effect Transistor, 33A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS247 - N-CHANNEL POWER MOSFET;
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-220-5
MountThrough Hole
Number of Terminals5
Technical
Continuous Drain Current (ID)33 A
Current Rating33 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.73 nF
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage55 V
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation120 W
Rds On Max18 mΩ
Rise Time30 ns
Turn-Off Delay Time30 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)55 V