Infineon IRFB4615PBF

IRFB4615PBF N-channel MOSFET Transistor, 35 A, 150 V, 3-Pin TO-220AB

Trans MOSFET N-CH 150V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 35A TO-220AB

Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Power MOSFET, N Channel, 150 V, 35 A, 0.032 ohm, TO-220AB, Through Hole

HEXFET POWER MOSFET Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N-CH, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.