価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF8306MTRPBF | 9,600 | 4h | |||||||||
| Microchip USA | IRF8306MTRPBF | 1,069 | 600 | Bulk | 4d | |||||||
| Verical | IRF8306MTRPBF | 9,600 | 202 | |||||||||
| Win Source | WS-IRF8306MTRPBF | 14,800 | 35 | 5h | ||||||||
| Worldway Electronics | IRF8306MTRPBF | 17,028 | 7 | Tape & Reel | 4h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
関連部品
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MOSFET N-CH 30V 27A DIRECTFET / Trans MOSFET N-CH Si 30V 27A 7-Pin Direct-FET MX T/R
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MOSFET, N-CH, 30V, 150A, 150DEG C, 80W; Available until stocks are exhausted
説明
Infineon IRF8306MTRPBFの詳細は販売業者から提供されます。
Trans MOSFET N-CH 30V 23A 7-Pin Direct-FET MX T/R
Power Field-Effect Transistor, 140A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRF8306 12V-300V N-CHANNEL POWER MOSFET;
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance; Integrated Monolithic Sckottky Diode | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
メーカーの別名
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.11 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation75 W
Rds On Max2.5 mΩ
Rise Time34 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time16 ns
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
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