サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
InfineonIRF8302MTRPBF
Mosfet, N-Ch, 30V, 190A, 150Deg C, 104W Rohs Compliant: Yes |Infineon IRF8302MTRPBF
onsemiNTMFS4898NFT1G
NTMFS4898N: Power MOSFET 30V 117A 3 mOhm Single N-Channel with Integrated Schottky SO-8FL
VishaySIRA06DP-T1-GE3
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Cur
VishaySIRA04DP-T1-GE3
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
InfineonIRF9383MTRPBF
T&R / MOSFET, P-CHANNEL, -30V, -160A, 2.9 mOhm, -4.5V capable, DirectFET M-Can
説明
Infineon IRF8308MTRPBFの詳細は販売業者から提供されます。
Single N-Channel 30 V 1.9 mOhm 42 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N-CH, 30V, 27A, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.8W; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-40°C to +150°C
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.404 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation89 W
Rds On Max2.5 mΩ
Rise Time19 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time11 ns
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント