Infineon IRF7832PBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V

Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

MOSFET N-CH 30V 20A 8SO N-Channel 30 V 20A (Ta) 2.5W (Ta) Surface Mount 8-SO

HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.32V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:160A; Row Pitch:6.3mm; SMD Marking:IRF7832PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.32V; Voltage Vgs Rds on Measurement:10V