関連部品
説明
Infineon IRF7478QPBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 26 Milliohms;ID 4.2A;SO-8;PD 2.5W;VGS +/-20V
Trans MOSFET N-CH 60V 7A 8-Pin SOIC
60V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:21nC; Current Id Max:7A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:56A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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技術仕様
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.74 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation2.5 W
Rise Time2.6 ns
TerminationSMD/SMT
Turn-Off Delay Time44 ns
Turn-On Delay Time7.7 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm