サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-02-08
Lifecycle StatusObsolete (Last Updated: 7 months ago)
関連部品
説明
Infineon IRF7465PBFの詳細は販売業者から提供されます。
IRF7465PBF N-channel MOSFET Transistor,1.9 A, 150 V, 8-Pin SOIC
High frequency DC-DC converters, Lead-Free | MOSFET N-CH 150V 1.9A 8-SOIC
Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Fall Time tf:9ns; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:15A; Rise Time:1.2ns; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
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- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)1.9 A
Current Rating1.9 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Fall Time9 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance330 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Elements1
On-State Resistance280 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max280 mΩ
Resistance280 mΩ
Rise Time1.2 ns
TerminationSMD/SMT
Threshold Voltage5.5 V
Turn-Off Delay Time10 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)150 V
Dimensions
Height1.5 mm
Length5 mm
Width3.9878 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
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