サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-04-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
関連部品
InfineonIRF7425TRPBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
説明
Infineon IRF7457PBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 5.5Milliohms;ID 15A;SO-8;PD 2.5W;VGS +/-20V
Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:20V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:120A; Row Pitch:6.3mm; SMD Marking:IRF7457PBF; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)15 A
Current Rating15 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time7.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.1 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance7 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max7 mΩ
Resistance7 MΩ
Rise Time16 ns
Threshold Voltage3 V
Turn-Off Delay Time16 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)20 V
Dimensions
Height1.75 mm
Length5 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
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