価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7456PBF | 0 | 3800 | Bulk | 12h | |||||||
| Farnell | IRF7456PBF | 0 | 5 | 22h | ||||||||
| Win Source | WS-IRF7456PBF | 41,000 | 60 | 23h | ||||||||
| Worldway Electronics | IRF7456PBF | 14,478 | 7 | Tube | 22h | |||||||
| ICPartonline | IRF7456PBF | 31,605 | >1wk |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
InfineonIRF7425TRPBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
InfineonIRF7425PBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
説明
Infineon IRF7456PBFの詳細は販売業者から提供されます。
Transistor MOSFET N Channel 20 Volt 16 Amp 8-Pin SOIC
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.0047Ohm;ID 16A;SO-8;PD 2.5W;VGS +/-12V;-55
HEXFET POWER MOSFET Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:20V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:16A; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Junction Temperature Tj Min:-55°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:130A; SMD Marking:F7456; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.64 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance6.5 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max6.5 mΩ
Recovery Time72 ns
Resistance6.5 mΩ
Rise Time25 ns
Threshold Voltage2 V
Turn-Off Delay Time50 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)20 V
Dimensions
Height1.75 mm
Length4.9784 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント