Infineon IRF7329PBF

MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de

Transistor MOSFET Positive Channel 12 Volt 9.2A 8-Pin SOIC T/R

Dual P-Channel 12 V 17 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

Benefits: RoHS Compliant; Low RDS(on); Dual P-Channel MOSFET

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-9.2A; On Resistance, Rds(on):17mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:12V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-9.2A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:37A; Row Pitch:6.3mm; SMD Marking:IRF7329PBF; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V