サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-11
Lifecycle StatusObsolete (Last Updated: 8 months ago)
関連部品
InfineonIRFH4255DTRPBF
25V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package, PG-TISON-8, RoHS
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説明
Infineon IRF6711STRPBFの詳細は販売業者から提供されます。
Trans MOSFET N-CH Si 25V 19A 6-Pin Direct-FET SQ T/R
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 25V, 19A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
MountSurface Mount
Number of Pins5
Number of Terminals4
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vds)25 V
Fall Time5.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.81 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance3.8 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.2 W
Rds On Max3.8 mΩ
Rise Time13 ns
Turn-Off Delay Time7.1 ns
Turn-On Delay Time7.7 ns
Dimensions
Height700 µm
Length4.826 mm
Width3.95 mm