Infineon IRF6712STR1PBF

Trans MOSFET N-CH 25V 17A 6-Pin Direct-FET SQ T/R

DIRECTFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):6.7mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:SQ ;RoHS Compliant: Yes

MOSFET, N, DIRECTFET, 25V, SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:25V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Transistor Case Style:SQ; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:6712; Current Id Max:17A; Package / Case:SQ; Power Dissipation Pd:2.2mW; Pulse Current Idm:130A; SMD Marking:2.2; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V