価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6710S2TRPBF | 0 | 4800 | Bulk | 13h | |||||||
| Win Source | WS-IRF6710S2TRPBF | 30,900 | 100 | 21h | ||||||||
| Worldway Electronics | IRF6710S2TRPBF | 14,576 | 7 | Tape & Reel | 2d | |||||||
| ICPartonline | IRF6710S2TRPBF | 7,330 | 5d | |||||||||
| Voyager Components | IRF6710S2TRPBF-IR-2010 | 15,128 | 3h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-05-11
LTD Date2018-05-11
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説明
Infineon IRF6710S2TRPBFの詳細は販売業者から提供されます。
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:12mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0045ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
MountSurface Mount
Number of Pins6
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.19 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation15 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.9 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation15 W
Rds On Max5.9 mΩ
Rise Time20 ns
Turn-Off Delay Time5.2 ns
Turn-On Delay Time7.9 ns
Dimensions
Height558.8 µm
Length4.826 mm
Width3.95 mm