価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF3007SPBF | 0 | 3200 | Bulk | 13h | |||||||
| Microchip USA | IRF3007SPBF | 352 | 300 | Bulk | 13h | |||||||
| Win Source | WS-IRF3007SPBF | 20 | 16 | 22h | ||||||||
| Worldway Electronics | IRF3007SPBF | 12,023 | 7 | Tube | 21h | |||||||
| Shenzhen Glow Technology Co., Ltd | 2047226 | 連絡先 | 10 | >1w |
代替部品
Price @ 1000
$ 1.041
Stock
93,549
194,996
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
62 A
62 A
Threshold Voltage
-
-
Rds On Max
12.6 mΩ
12.6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
120 W
120 W
Input Capacitance
3.27 nF
3.27 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-09-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
関連部品
InfineonIRFS3607TRLPBF
Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-263 (D2PAK), Surface Mount
InfineonIRF2807ZSTRLPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 75A;D2Pak;PD 170W;VGS +/-20
InfineonIRFS3607PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;D2Pak;PD 140W;VGS +/-2
STMicroelectronicsSTB75NF75T4
N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in D2PAK package
説明
Infineon IRF3007SPBFの詳細は販売業者から提供されます。
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 75V 62A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)62 A
Current Rating62 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance12.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.27 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance12.6 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation120 W
Rds On Max12.6 mΩ
Rise Time80 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)75 V
Dimensions
Height4.572 mm
Length10.668 mm
Width9.65 mm