Infineon IRF2204PBF

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 3 Milliohms;ID 210A;TO-220AB;PD 330W;VF 1.3V

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Single N-Channel 40 V 3.6 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3

Trans MOSFET N-CH 40V 210A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 210A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

MOSFET, N, 40V, 210A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:210A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:3.6ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:850A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 33 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.6 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 140 / Turn-OFF Delay Time ns = 62 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 330