Infineon IR2308SPBFの詳細は販売業者から提供されます。
600 V half-bridge gate driver IC with shoot through protection, SOIC 8N, RoHS
Infineon SCT
Tube IR2308SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW
IR2108 Series 200 mA 20 V Dual Output Half Bridge Driver - SOIC-8
MOSFET DRVR 600V 0.35A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-Lead package
HALF-BRIDGE DRIVER Half Bridge Based MOSFET Driver, 0.35A, CMOS, PDSO8
MOSFET Driver IC; Device Type:Half-Bridge; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:SMD; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Delay Matching:46ns ;RoHS Compliant: Yes
MOSFET/IGBT DRIVER HALF BRIDGE, SMD; Driver IC Type:MOSFET; No. of Outputs:2; Voltage, Output:620V; Output Current:200mA; Power Dissipation Pd:0.625W; Voltage, Supply Min:10V; Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Base Number:2308; IC Generic Number:2308; Logic Function Number:2308; Temp, Op. Max:125°C; Temp, Op. Min:-40°C; Termination Type:SMD; Voltage, Offset:600V; Voltage, Output Max:20V; Voltage, Output Min:10V; Voltage, Supply Max:20V; Min Output Sink Current:250mA; Min Output Source Current:120mA; Time, t Off:200ns; Time, t On:220ns
600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V and 15 V input logic compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Outputs in phase with inputs; Logic and power ground +/- 5 V offset.; Internal 540ns dead-time; Lower di/dt gate driver for better noise immunity