Infineon IR21064SPBFの詳細は販売業者から提供されます。
600 V high-side and low-side gate driver IC with separate pin for logic ground, SOIC 14N, RoHS
Infineon SCT
Tube IR21064SPBF High-Side or Low-Side 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 1W
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 14-Lead package
HIGH AND LOW SIDE DRIVER Half Bridge Based MOSFET Driver, 0.35A, CMOS, PDSO14
MOSFET DRVR 600V 0.35A 2-OUT Hi/Lo Side Non-Inv 14-Pin SOIC N Tube
DRIVER, MOSFET HIGH/LOW, SMD, 21064; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:350mA; Input Delay:220ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:14; Operating Temperature Range:-40°C to +125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:21064; IC Generic Number:21064; Logic Function Number:21064; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:200ns; Turn On Time:220ns
600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Logic and power ground + /- 5 V offset; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs
The IR2106(4)(S) are high voltage,high speed power MOSFET and IGBT drivers with independent highand low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.