Infineon IPZ60R099C7XKSA1

Power MOSFET, N Channel, 600 V, 22 A, 99 Milliohms, TO-247, 4 Pins, Through Hole

Trans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO247-4, RoHS

N-Ch 600V 22A 110W 0,099R TO247-4

Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOS Power Transistors HV (>= 200V)

IPZ60R099 - 600V COOLMOS N-CHANN

Mosfet, N-Ch, 600V, 22A, 110W, To-247; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPZ60R099C7XKSA1

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.