Infineon IPZ60R060C7XKSA1

MOSFET N-CH 600V 35A TO247-4 / N-Channel 600 V 35A (Tc) 162W (Tc) Through Hole PG-TO247-4

Power Field-Effect Transistor, 35A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Mosfet, N-Ch, 600V, 35A, 162W, To-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.052Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPZ60R060C7XKSA1

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.