関連部品
STMicroelectronicsSTU2LN60K3
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in IPAK package
onsemiFQU2N60CTU
Transistor: N-MOSFET; unipolar; 600V; 1.9A; 4.7ohm; 2.5W; -55+150 deg.C; THT; IPAK
説明
Infineon IPU80R2K8CEBKMA1の詳細は販売業者から提供されます。
Trans MOSFET N-CH 800V 1.9A 3-Pin(3+Tab) TO-251 Tube
N-CH 800V 1,9A 2800mOhm TO251-3
COOLMOS N-CHANNEL POWER MOSFET
800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage, PG-TO251-3, RoHS
Infineon SCT
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight343.085929 mg
Technical
Continuous Drain Current (ID)1.9 A
Drain to Source Resistance2.8 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance290 pF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance2.8 Ω
Package Quantity1500
Power Dissipation42 W
Rds On Max2.8 Ω
Rise Time15 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Dimensions
Height6.22 mm
Length6.73 mm
Width2.41 mm