サプライチェーン
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-09-25
Lifecycle StatusNRND (Last Updated: 2 weeks ago)
関連部品
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Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
説明
Infineon IPU60R1K5CEAKMA2の詳細は販売業者から提供されます。
Single N-Channel 650 V 1.5 Ohm 9.4 nC CoolMOS Power Mosfet - TO-251, PG-TO251-3, RoHS
Infineon SCT
Trans MOSFET N-CH 650V 5A 3-Pin(3+Tab) TO-251 Tube
Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Infineon MOSFET IPU60R1K5CEAKMA2
Compliant Surface Mount Contains Lead 1.5 Ω TO-251-3 Halogen Free Production (Last Updated: 2 years ago) 1500
Very high commutation ruggedness
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-251-3
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance200 pF
Max Dual Supply Voltage600 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation49 W
Min Breakdown Voltage600 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1.5 Ω
Package Quantity1500
Power Dissipation28 W
Rds On Max1.5 Ω
Turn-Off Delay Time40 ns
Turn-On Delay Time8 ns
Dimensions
Height8.75 mm
コンプライアンス
環境分類
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
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