関連部品
InfineonIPI50N10S3L16AKSA1
100V, N-Ch, 15 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T, PG-TO262-3-3, RoHS
説明
Infineon IPI80CN10NGの詳細は販売業者から提供されます。
Trans MOSFET N-CH 100V 13A 3-Pin(3+Tab) TO-262
Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
MOSFET, N CH, 13A, 100V, PG-TO262-3; Transistor Polarity:N; Current Id Max:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):61mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:31W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO262; No. of Pins:3; Transistor Type:Power MOSFET
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技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance716 pF
Max Operating Temperature175 °C
Max Power Dissipation31 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation31 W
Rds On Max80 mΩ
Rise Time4 ns
Turn-Off Delay Time13 ns