サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-09-22
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2012-09-19
LTD Date2013-03-19
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Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
説明
Infineon IRFZ24NLPBFの詳細は販売業者から提供されます。
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):70mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation3.8 W
Rds On Max70 mΩ
Rise Time34 ns
Voltage Rating (DC)55 V