Infineon IPD65R1K0CEAUMA1の詳細は販売業者から提供されます。
Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R
650V 7.2A 68W 1惟@10V,1.5A 3.5V@200uA 1 N-Channel TO-252-3 MOSFETs ROHS
Power Field-Effect Transistor, 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Infineon NMOS CoolMOS CE, Vds=650 V, 7.2 A, TO-252, , 3
Infineon MOSFET IPD65R1K0CEAUMA1
650VCoolMOSªCEPowerTransistor, PG-TO252-3, RoHS
Infineon SCT
IPD65R1K0 650V AND 700V COOLMOS N-CHANN;
Mosfet, N-Ch, 650V, 7.2A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPD65R1K0CEAUMA1
CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.