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Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-08-31

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

LTB Date2015-09-15

LTD Date2015-12-15

説明

Infineon IPD60R950C6ATMA1の詳細は販売業者から提供されます。

Power MOSFET, N Channel, 650 V, 5.7 A, 0.68 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

Trans MOSFET N-CH 600V 4.4A 3-Pin(2+Tab) DPAK T/R / Metal Oxide Semiconductor Field Effect Transistor | MOSFET N-CH 600V 4.4A TO252

Win Source

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

Infineon SCT

Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:48W; No. of Pins:3Pins RoHS Compliant: Yes

Newark

MOSFET,N CH,600V,8.1A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.4A; Power Dissipation Pd:37W; Voltage Vgs Max:30V

element14 APAC

CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Infineon