サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-02-28
LTD Date2013-08-31
関連部品
InfineonIPB011N04NGATMA1
TRANSISTOR, OPTIMOS 3 POWER MOSFET, N-CHANNEL, NORMAL LEVEL, 40V, 180A, TO263-7
説明
Infineon IPB023N04N Gの詳細は販売業者から提供されます。
Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-263
Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
MOSFET, N CH, 90A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:167W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.3 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time7.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10 nF
Max Operating Temperature175 °C
Max Power Dissipation167 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation167 W
Rds On Max2.3 mΩ
Rise Time6.6 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time27 ns