Infineon FZ600R12KE3HOSA1

62 mm 1200 V, 600 A single switch IGBT module with TRENCHSTOP™ IGBT3 and Emitter Controlled 3 Diode.

Trans IGBT Module N-CH 1200V 900A 2800W 4-Pin 62MM-2 Tray

1200 V, 600 A single switch IGBT module, AG-62MM-2, RoHS

Transistor IGBT Module N-CH 1.2kV 900A ±20V Screw Tray

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel

2.8KW 1.7V 1.2KV 900A AG-62MM-2 106.4mm*61.4mm*36.5mm

IGBT Modules 1200V 600A SINGLE

IGBT MODULE, 1200V; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Saturation Voltage Vce(on):2.15V; Power Dissipation Pd:2.8kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Styl

IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V