Infineon BSZ0901NSATMA1の詳細は販売業者から提供されます。
Trans MOSFET N-CH 30V 22A Automotive 8-Pin TSDSON EP T/R
2.1W 20V 2.2V 45nC 1N 30V 2m¦¸@ 10V 40A 2.85nF@ 15V SON , 3.3mm*3.3mm*1mm
22 A 30 V 0.0026 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 22A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
MOSFET N-CH 30V 22A/40A 8TSDSON
MOSFET 30V 22A N-CH PG-TSDSON-8
30V 145A 1.7mΩ@10V,20A 69W 2V@250uA 150pF@15V N Channel 2.85nF@15V 23nC@0~4.5V -55℃~+150℃@(Tj) PG-TSDSON-8 MOSFETs ROHS
BSZ0901NS Infineon Technologies
BSZ0901 - 12V-300V N-CHANNEL POW
MOSFET, N-CH, 30V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 50W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)