価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BSS138NH6327XTSA2 | 200,000 | 3K | 2d | ||||||||
| Newark | BSS138NH6327XTSA2 | 135,785 | 1 | Cut Tape | ||||||||
| Arrow Electronics | BSS138NH6327XTSA2 | 31,495 | 1 | |||||||||
| DigiKey | BSS138NH6327XTSA2CT-ND | 21,979 | 1 | Cut Tape | ||||||||
| Future Electronics | BSS138NH6327XTSA2 | 0 | 3K | Tape & Reel |
CADモデル
製造元 Infineon BSS138NH6327XTSA2 のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 Component Search Engine | シンボルフットプリント | 3D | ダウンロード |
 EE Concierge | シンボルフットプリント | ||
 SnapEDA | 3D | ダウンロード | |
 Ultra Librarian | シンボルフットプリント | ダウンロード |
CADモデルをダウンロードする際に、パートナーサイトが新しいタブで開きます。
OctopartからCADモデルをダウンロードすることにより、お客様は弊社の利用規約とプライバシーポリシーに同意したものとみなされます。
代替部品
Price @ 1000
$ 0.072
$ 0.072
Stock
6,655,840
451,303
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
230 mA
230 mA
Threshold Voltage
1 V
-
Rds On Max
3.5 Ω
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
360 mW
360 mW
Input Capacitance
32 pF
-
サプライチェーン
Country of OriginAustria, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2003-06-10
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2012-06-30
LTD Date2012-12-31
説明
Infineon BSS138NH6327XTSA2の詳細は販売業者から提供されます。
Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount
Infineon Technologies N channel SIPMOS small signal transistor, 60 V, 0.23 A, SOT-23, BSS138N
Single N-Channel 60 V 3.5 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-23
60V 230mA 3.5´Î@10V230mA 360mW 1.4V@26Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET Devices; INFINEON; BSS138NH6327XTSA2; 60 V; 230 mA; 20 V; 360 mW
SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:230Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:360Mw; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies BSS138NH6327XTSA2.
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 230 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3.5 / Gate-Source Voltage V = 20 / Fall Time ns = 8.2 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 6.7 / Turn-ON Delay Time ns = 2.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360
N CHANNEL MOSFET, 230MA, 60V, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:360mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:230mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:360mW; Pulse Current Idm:920mA; Rate of Voltage Change dv / dt:6kV/µs; SMD Marking:SKs; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)230 mA
Current2 A
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Fall Time8.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance32 pF
Max Dual Supply Voltage60 V
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
On-State Resistance3.5 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation360 mW
Rds On Max3.5 Ω
Recovery Time14.5 ns
Rise Time3 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time6.7 ns
Turn-On Delay Time2.3 ns
Voltage50 V
Dimensions
Width3.05 mm
コンプライアンス
環境分類
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
準拠ステートメント