サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-05-15
LTD Date2013-11-15
関連部品
NXP SemiconductorsPMT200EN,115
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
説明
Infineon BSP129L6906の詳細は販売業者から提供されます。
Trans MOSFET N-CH 240V 0.35A 4-Pin(3+Tab) SOT-223 T/R
Compliant Surface Mount 4.1 ns Lead Free 4.1 ns 6 Ω TO-261-4 50 mA
Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP129 0.35A, 240V, NCHANEL POWER MOSFET;
メーカーの別名
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)350 mA
Current Rating50 mA
Drain to Source Breakdown Voltage240 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)240 V
Fall Time4.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance108 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage240 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.8 W
Rds On Max6 Ω
Rise Time4.1 ns
Turn-Off Delay Time22 ns
Turn-On Delay Time4.4 ns
Voltage Rating (DC)240 V