価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | BSO200N03 | 357 | 11h | |||||||||
| Microchip USA | BSO200N03 | 1,616 | 3500 | Tray | 1d | |||||||
| Win Source | WS-BSO200N03 | 35,500 | 90 | 12h | ||||||||
| Worldway Electronics | BSO200N03 | 16,988 | 7 | Tape & Reel | 1d | |||||||
| Aztech | BSO200N03 | 7,894 | 1d |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-05-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-02-28
LTD Date2011-08-31
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Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
説明
Infineon BSO200N03の詳細は販売業者から提供されます。
Transistor MOSFET Array Dual N-CH 30V 7.9A 8-Pin DSO
MOSFET 2N-CH 30V 6.6A 8DSO
Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012
SMALL SIGNAL N-CHANNEL MOSFET
MOSFET, N, 30V, SO-8; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:7.9A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:32A; Resistance, Rds on @ Vgs = 4.5V:0.027ohm; Voltage, Vds:30V; Voltage, Vds Max:30V
メーカーの別名
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.6 A
Current Rating6.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time2.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.01 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation1.56 W
Rds On Max20 mΩ
Rise Time2.6 ns
Turn-Off Delay Time12 ns
Turn-On Delay Time2.9 ns
Voltage Rating (DC)30 V