サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-14
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2017-01-31
LTD Date2017-01-31
関連部品
InfineonBSD214SNH6327XTSA1
Mosfet, N-Ch, 20V, 1.5A, Sot-363 Rohs Compliant: Yes |Infineon Technologies BSD214SNH6327XTSA1
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Dual Mosfet, P-Ch, 20V, 0.9A, Sot-363 Rohs Compliant: Yes |Diodes Inc. DMP2200UDW-7
説明
Infineon BSD816SNL6327HTSA1の詳細は販売業者から提供されます。
1400 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET
Trans MOSFET N-CH 20V 1.4A 6-Pin SOT-363 T/R
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SMALL SIGNAL N-CHANNEL MOSFET
メーカーの別名
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)1.4 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time2.2 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance180 pF
Max Dual Supply Voltage20 V
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation500 mW
Rds On Max160 mΩ
Rise Time9 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time5.3 ns