代替部品
Price @ 1000
$ 5.57
$ 1.325
$ 1.325
Stock
98,764
800,819
800,819
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
180 A
180 A
180 A
Threshold Voltage
-
-
-
Rds On Max
4.7 mΩ
4.7 mΩ
4.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
375 W
375 W
375 W
Input Capacitance
9.575 nF
9.575 nF
9.575 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-08-16
Lifecycle StatusObsolete (Last Updated: 1 month ago)
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説明
Infineon AUIRFS4010の詳細は販売業者から提供されます。
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK Tube
Transistor MOSFET N-ch 100V 127A D2PAK
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
Infineon SCT
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.575 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Package Quantity1000
Power Dissipation375 W
Rds On Max4.7 mΩ
Rise Time86 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time21 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm