サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-08-22
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2025-03-31
LTD Date2025-09-30
説明
Infineon AUIRFS3006-7TRLの詳細は販売業者から提供されます。
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
Trans MOSFET N-CH 60V 293A Automotive 7-Pin(6+Tab) D2PAK T/R
Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time69 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.85 nF
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity800
PackagingTape & Reel (TR)
Power Dissipation375 W
Rds On Max2.1 mΩ
Rise Time61 ns
Turn-Off Delay Time118 ns
Turn-On Delay Time14 ns