サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
InfineonIPD50N04S408ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 7.9 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount
InfineonIPD50N04S4L08ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 0.0062 ohm, TO-252 (DPAK), Surface Mount
Diodes Inc.DMTH4007LK3-13
2.6W(Ta) 20V 3V@ 250¦ÌA 29.1nC@ 10 V 1N 40V 7.3m¦¸@ 20A,10V 16.8A,70A 1.895nF@30V TO-252-3
Diodes Inc.DMTH4007LK3Q-13
Mosfet, N-Ch, 40V, 70A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH4007LK3Q-13
説明
Infineon AUIRFR3504の詳細は販売業者から提供されます。
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Infineon SCT
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, N CH, 40V, 56A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9.2 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance9.2 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max9.2 mΩ
Rise Time53 ns
Threshold Voltage2 V
Turn-Off Delay Time36 ns
Turn-On Delay Time11 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm