Infineon IPD50N04S408ATMA1の詳細は販売業者から提供されます。
Power MOSFET, N Channel, 40 V, 50 A, 7.9 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount
40V, N-Ch, 7.9 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
Infineon SCT
MOSFET, N CH, 40V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
OPTIMOS-T2 POWER-TRANSISTOR Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications